Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study
In: 1st IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008); (2008-09-01) S. 7
Konferenz
Zugriff:
Titel: |
Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study
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Autor/in / Beteiligte Person: | Silvestri, Luca ; Reggiani, Susanna ; Gnani, Elena ; Gnudi, Antonio ; Rudan, Massimo ; Baccarani, Giorgio |
Quelle: | 1st IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008); (2008-09-01) S. 7 |
Veröffentlichung: | 2008 |
Medientyp: | Konferenz |
ISBN: | 978-0-7695-3379-7 (print) |
DOI: | 10.1109/NDCS.2008.19 |
Sonstiges: |
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