Mobility extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness
In: 10th International Conference on Ultimate Integration on Silicon (ULIS; (2009-03-01) S. 27
Konferenz
Zugriff:
Titel: |
Mobility extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness
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Autor/in / Beteiligte Person: | Schmidt, M. ; Lemme, M.C. ; Gottlob, H.D.B. ; Kurz, H. ; Driussi, F. ; Selmi, L. |
Quelle: | 10th International Conference on Ultimate Integration on Silicon (ULIS; (2009-03-01) S. 27 |
Veröffentlichung: | 2009 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-3704-7 (print) |
DOI: | 10.1109/ULIS.2009.4897531 |
Sonstiges: |
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