Modeling the threshold voltage of ultra-thin-body(UTB) long channel symmetric double-gate (DG) MOSFETs
In: International Semiconductor Device Research Symposium (ISDRS); (2009-12-01) S. 1
Konferenz
Zugriff:
Titel: |
Modeling the threshold voltage of ultra-thin-body(UTB) long channel symmetric double-gate (DG) MOSFETs
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Autor/in / Beteiligte Person: | Medury, Aditya Sankar ; Majumdar, Kausik ; Bhat, Navakanta ; Bhat, K. N. |
Quelle: | International Semiconductor Device Research Symposium (ISDRS); (2009-12-01) S. 1 |
Veröffentlichung: | 2009 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-6030-4 (print) ; 978-1-4244-6031-1 (print) |
DOI: | 10.1109/ISDRS.2009.5378101 |
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