Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo
In: IEEE Transactions on Electron Devices, Jg. 58 (2011-03-01), Heft 3, S. 600-608
academicJournal
Zugriff:
Titel: |
Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo
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Autor/in / Beteiligte Person: | Riddet, C. ; Alexander, C. ; Brown, A. R. ; Roy, S. ; Asenov, A. |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 58 (2011-03-01), Heft 3, S. 600-608 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2010.2095422 |
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