RDF effect induced by source/drain doping in nano-scale UTB SOI MOSFET with nominally un-doped channel
In: IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC); (2010-12-01) S. 1-4
Konferenz
Zugriff:
Titel: |
RDF effect induced by source/drain doping in nano-scale UTB SOI MOSFET with nominally un-doped channel
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Autor/in / Beteiligte Person: | Du, Linfeng ; Zhang, Shengdong |
Quelle: | IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC); (2010-12-01) S. 1-4 |
Veröffentlichung: | 2010 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-9997-7 (print) ; 978-1-4244-9996-0 (print) ; 978-1-4244-9998-4 (print) |
DOI: | 10.1109/EDSSC.2010.5713715 |
Sonstiges: |
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