A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs
In: Spanish Conference on Electron Devices (CDE); (2011-02-01) S. 1-4
Konferenz
Zugriff:
Titel: |
A simple analytical and explicit compact model for the drain current of UTB SOI MOSFETs
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Autor/in / Beteiligte Person: | Lime, F. ; Ritzenthaler, R. ; Iniguez, B. ; Miranda, E. ; Martinez, F. ; Pascal, F. ; Faynot, O. |
Quelle: | Spanish Conference on Electron Devices (CDE); (2011-02-01) S. 1-4 |
Veröffentlichung: | 2011 |
Medientyp: | Konferenz |
ISBN: | 978-1-4244-7863-7 (print) ; 978-1-4244-7864-4 (print) ; 978-1-4244-7865-1 (print) |
ISSN: | 2163-4971 (print) |
DOI: | 10.1109/SCED.2011.5744174 |
Sonstiges: |
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