Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs
In: MIXDES - 19th International Conference "Mixed Design of Integrated Circuits & Systems"; (2012-05-01) S. 88-93
Konferenz
Zugriff:
Titel: |
Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs
|
---|---|
Autor/in / Beteiligte Person: | Schwarz, Mike ; Holtij, Thomas ; Kloes, Alexander ; Iniguez, Benjamin |
Quelle: | MIXDES - 19th International Conference "Mixed Design of Integrated Circuits & Systems"; (2012-05-01) S. 88-93 |
Veröffentlichung: | 2012 |
Medientyp: | Konferenz |
ISBN: | 978-1-4577-2092-5 (print) ; 978-83-932075-6-5 (print) ; 978-83-932075-8-9 (print) |
Sonstiges: |
|