Dual-material gate schottky barrier UTB DG MOSFETs with Ge and III-V channel
In: Silicon Nanoelectronics Workshop (SNW); (2014-06-01) S. 1-2
Konferenz
Zugriff:
Titel: |
Dual-material gate schottky barrier UTB DG MOSFETs with Ge and III-V channel
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Autor/in / Beteiligte Person: | Choi, W. ; Lee, J. ; Shin, M. |
Quelle: | Silicon Nanoelectronics Workshop (SNW); (2014-06-01) S. 1-2 |
Veröffentlichung: | 2014 |
Medientyp: | Konferenz |
ISBN: | 978-1-4799-5676-0 (print) ; 978-1-4799-5677-7 (print) |
DOI: | 10.1109/SNW.2014.7348614 |
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