Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs
In: IEEE Transactions on Electron Devices, Jg. 64 (2017-10-01), Heft 10, S. 3986-3990
academicJournal
Zugriff:
Titel: |
Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs
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Autor/in / Beteiligte Person: | Lin, Y. ; Kushwaha, P. ; Agarwal, H. ; Chang, H. ; Duarte, J.P. ; Sachid, A.B. ; Khandelwal, S. ; Salahuddin, S. ; Hu, C. |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 64 (2017-10-01), Heft 10, S. 3986-3990 |
Veröffentlichung: | 2017 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2017.2735455 |
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