Back-Gate Modulation in UTB GeOI pMOSFETs With Advanced Substrate Fabrication Technique
In: IEEE Transactions on Electron Devices, Jg. 65 (2018-03-01), Heft 3, S. 895-900
academicJournal
Zugriff:
Titel: |
Back-Gate Modulation in UTB GeOI pMOSFETs With Advanced Substrate Fabrication Technique
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Autor/in / Beteiligte Person: | Zheng, Z. ; Yu, X. ; Zhang, Y. ; Xie, M. ; Cheng, R. ; Zhao, Y. |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 65 (2018-03-01), Heft 3, S. 895-900 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2018.2798407 |
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