HEtero-layer-lift-off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs
In: International Symposium on VLSI Technology, Systems and Application (VLSI-TSA); (2018-04-01) S. 1-2
Konferenz
Zugriff:
Titel: |
HEtero-layer-lift-off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs
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Autor/in / Beteiligte Person: | Chang, Wen Hsin ; Irisawa, Toshifumi ; Ishii, Hiroyuki ; Hattori, Hiroyuki ; Uchida, Noriyuki ; Maeda, Tatsuro |
Quelle: | International Symposium on VLSI Technology, Systems and Application (VLSI-TSA); (2018-04-01) S. 1-2 |
Veröffentlichung: | 2018 |
Medientyp: | Konferenz |
ISBN: | 978-1-5386-4825-4 (print) |
DOI: | 10.1109/VLSI-TSA.2018.8403822 |
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