Effects of composition fraction on subthreshold behavior of InAsxSb(1-x) channel UTB MOSFETs
In: Emerging Trends in Electronic Devices and Computational Techniques (EDCT); (2018-03-01) S. 1-5
Konferenz
Zugriff:
Titel: |
Effects of composition fraction on subthreshold behavior of InAsxSb(1-x) channel UTB MOSFETs
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Autor/in / Beteiligte Person: | Dey, Sulata ; Dey, Bikash ; Bhattacherjee, Swagata |
Quelle: | Emerging Trends in Electronic Devices and Computational Techniques (EDCT); (2018-03-01) S. 1-5 |
Veröffentlichung: | 2018 |
Medientyp: | Konferenz |
ISBN: | 978-1-5386-1484-6 (print) |
DOI: | 10.1109/EDCT.2018.8405089 |
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