Analysis of Negative Capacitance UTB SOI MOSFETs considering Line-Edge Roughness and Work Function Variation
In: IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM); (2018-03-01) S. 13-15
Konferenz
Zugriff:
Titel: |
Analysis of Negative Capacitance UTB SOI MOSFETs considering Line-Edge Roughness and Work Function Variation
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Autor/in / Beteiligte Person: | Chiu, Pin-Chieh ; Hu, Vita Pi-Ho |
Quelle: | IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM); (2018-03-01) S. 13-15 |
Veröffentlichung: | 2018 |
Medientyp: | Konferenz |
ISBN: | 978-1-5386-3712-8 (print) ; 978-1-5386-3711-1 (print) |
DOI: | 10.1109/EDTM.2018.8421472 |
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