The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
In: IEEE Transactions on Electron Devices, Jg. 69 (2022-09-01), Heft 9, S. 4828-4834
academicJournal
Zugriff:
Titel: |
The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
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Autor/in / Beteiligte Person: | Zhu, L. ; Zhou, Q. ; Chen, K. ; Gao, W. ; Cai, Y. ; Cheng, K. ; Li, Z. ; Zhang, B. |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 69 (2022-09-01), Heft 9, S. 4828-4834 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2022.3188609 |
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