Quantitative identification of significant k-points enabling accurate & computationally efficient UTB MOS device simulation
In: International Semiconductor Conference (CAS); (2022-10-12) S. 247-250
Konferenz
Zugriff:
Titel: |
Quantitative identification of significant k-points enabling accurate & computationally efficient UTB MOS device simulation
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Autor/in / Beteiligte Person: | Vilochan Mishra, Nalin ; Medury, Aditya Sankar |
Quelle: | International Semiconductor Conference (CAS); (2022-10-12) S. 247-250 |
Veröffentlichung: | 2022 |
Medientyp: | Konferenz |
ISBN: | 978-1-6654-5255-7 (print) |
ISSN: | 2377-0678 (print) |
DOI: | 10.1109/CAS56377.2022.9934279 |
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