Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
In: Solid State Electronics, Jg. 53 (2009), Heft 5, S. 540-547
Online
academicJournal
Titel: |
Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs
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Autor/in / Beteiligte Person: | Sviličić, B. ; Jovanović, V. ; Suligoj, T. |
Link: | |
Zeitschrift: | Solid State Electronics, Jg. 53 (2009), Heft 5, S. 540-547 |
Veröffentlichung: | 2009 |
Medientyp: | academicJournal |
ISSN: | 0038-1101 (electronic) |
DOI: | 10.1016/j.sse.2009.03.002 |
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