Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation
In: Solid State Electronics, Jg. 54 (2010-02-01), Heft 2, S. 143-148
Online
academicJournal
Titel: |
Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 2 efficient self-consistent numerical solution of the k · p schrödinger equation
|
---|---|
Autor/in / Beteiligte Person: | Baumgartner, Oskar ; Karner, Markus ; Sverdlov, Viktor ; Kosina, Hans |
Link: | |
Zeitschrift: | Solid State Electronics, Jg. 54 (2010-02-01), Heft 2, S. 143-148 |
Veröffentlichung: | 2010 |
Medientyp: | academicJournal |
ISSN: | 0038-1101 (electronic) |
DOI: | 10.1016/j.sse.2009.12.010 |
Sonstiges: |
|