A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects
In: Solid State Electronics, Jg. 95 (2014-05-01), S. 52-60
Online
academicJournal
Titel: |
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects
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Autor/in / Beteiligte Person: | Kumar, Ajit ; Tiwari, Pramod Kumar |
Link: | |
Zeitschrift: | Solid State Electronics, Jg. 95 (2014-05-01), S. 52-60 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 0038-1101 (electronic) |
DOI: | 10.1016/j.sse.2014.03.004 |
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