2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs
In: Solid State Electronics, Jg. 99 (2014-09-01), S. 65-77
Online
academicJournal
Titel: |
2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs
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Autor/in / Beteiligte Person: | Schwarz, Mike ; Kloes, Alexander |
Link: | |
Zeitschrift: | Solid State Electronics, Jg. 99 (2014-09-01), S. 65-77 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 0038-1101 (electronic) |
DOI: | 10.1016/j.sse.2014.04.038 |
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