Zero temperature-coefficient bias point over wide range of temperatures for single- and double-gate UTB-SOI n-MOSFETs with trapped charges
In: Materials Science in Semiconductor Processing, Jg. 31 (2015-03-01), S. 175-183
Online
academicJournal
Titel: |
Zero temperature-coefficient bias point over wide range of temperatures for single- and double-gate UTB-SOI n-MOSFETs with trapped charges
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Autor/in / Beteiligte Person: | Sahu, P.K. ; Mohapatra, S.K. ; Pradhan, K.P. |
Link: | |
Zeitschrift: | Materials Science in Semiconductor Processing, Jg. 31 (2015-03-01), S. 175-183 |
Veröffentlichung: | 2015 |
Medientyp: | academicJournal |
ISSN: | 1369-8001 (electronic) |
DOI: | 10.1016/j.mssp.2014.11.036 |
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