Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs
In: IEEE Transactions on Electron Devices, Jg. 64 (2017-11-01), Heft 11, S. 3986-4000
academicJournal
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Titel: |
Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs
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Autor/in / Beteiligte Person: | Hu, Chenming ; Lin, Yen-Kai ; Chang, Huan-Lin ; Salahuddin, Sayeef ; Khandelwal, Sourabh ; Sachid, Angada B. ; Duarte, Juan Pablo ; Agarwal, Harshit ; Kushwaha, Pragya |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 64 (2017-11-01), Heft 11, S. 3986-4000 |
Veröffentlichung: | 2017 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
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