Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs
2015
Online
academicJournal
Zugriff:
Titel: |
Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs
|
---|---|
Autor/in / Beteiligte Person: | Yokoyama, Masafumi ; Kim, Minsoo ; Takenaka, Mitsuru ; Nakane, Ryosho ; Takagi, Shinichi ; Wakabayashi, Yuki K. |
Link: | |
Veröffentlichung: | 2015 |
Medientyp: | academicJournal |
ISSN: | 2436-7613 (print) |
DOI: | 10.11470/jsapmeeting.2015.2.0_2765 |
Sonstiges: |
|